The work contains results of investigations on photoemission in semiconducting films in which an internal electric field has been generated. The films (In2O3:Sn) were deposited on a glass substrate of thickness 0.2 mm. The internal electric field was created by applying a negative voltage to one of the films, whereas the other one was an emitting film. This created a transverse electric field which favoured electron emission into vacuum (10(-6) Pa). The investigation relied on registration of pulse amplitude spectra generated by electrons which had come into an electron multiplier. It has been shown that electron emission and photoemission grow monotonically with increasing bias voltage applied to the sample. In the discussion of the observed dependence the processes of impact ionization, electron tunneling and the energy bands bending due to the inner field have been taken into account.