Polysilicon TFTs were fabricated in as-deposited polycrystalline silicon films as well as in crystallized Rims that were deposited in a mixed phase. The elimination or drastic reduction of the crystallization anneal resulted in greatly reduced thermal budgets for TFT fabrication. This makes polycrystalline silicon TFTs much more attractive for AMLCD applications. Devices in as-deposited polysilicon show lower mobilities than TFTs in polysilicon crystallized from the amorphous phase, but still much higher than those of amorphous silicon TFTs. Devices in polysilicon crystallized from films containing a mixed phase layer exhibit mobilities close to those for TFTs in polysilicon crystallized from the amorphous phase at a fraction of the required crystallization time. TFTs in as-deposited polycrystalline silicon exhibit much higher punchthrough voltages compared to devices in crystallized films.