InxGa1-xN thin films with GaN buffer layers (200 degrees C) were grown on indium tin oxide (ITO)/glass substrates at 500 degrees C by RF plasma enhanced chemical vapor deposition (PECVD). Preferred (0002) and (10 (1) over bar 1) directions of the samples and successful incorporation of In with TMIn flow rate were characterized by X-ray diffraction (XRD). Results of the optical absorption measurements showed that the absorption band edges shifted to the lower energy with increasing In solid compositions. Atomic force microscopy (AFM) showed the lumps of grains tended to be larger with In solid composition although the surface deteriorated.