The radiative recombination in the p-type Al0.5Ga0.5As/GaAs heterostructure interface, so called H-band, was investigated using photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy. The enhancement of the H-band intensity with excitation at the free exciton energy was observed. Magnetoluminescence measurements, both in Faraday and Voigt configurations, were also performed. Non-excitonic behaviour of investigated line in fields B > 3 T and excitonic in lower fields was observed.