A novel plasma-enhanced chemical vapor deposition (PECVD) tungsten nitride (WxN) process was developed on an Applied Materials Centura(TM) WxZ chamber. Nitrogen (N-2), hydrogen (H-2), and tungsten hexafluoride (WF6) are the active components for this PECVD process. Si substrate encroachment by WF6 can be suppressed by a N-2/H-2 plasma pretreatment before WxN deposition. Resistivity of WxN film decreases as H-2/WF6 ratio increases and deposition temperature rises. A metrology technique using ellipsometry was used to measure the index of refraction and absorption coefficient to quantify WxN thickness and stoichiometry. Depending on W to N ratio and process conditions, the index of refraction, n, at 433 nm was measured between 3.26 and 3.68 and the absorption coefficient between 2.14 and 3.14. The resistivity of WxN with x = 0.7-2.2 was measured between 1850 and 240 mu Omega cm on an as-deposited film. Step coverage, surface roughness, stress, and impurity content of the amorphous films will also be reported. Feasibility of the in situ W/WxN stack deposition will be presented with the results to demonstrate the capability for gate stack application.