The influence of the deposition rate on the morphology of epitaxial Sb layers on GaAs(110) is investigated. Layers with a nominal thickness of 30 monolayers (ML) were deposited with varying deposition rates (10 to 0.03 ML/min) on substrates kept at room temperature. Characterization techniques employed are Raman scattering, low energy electron diffraction (LEED), X-ray reflectivity and scanning probe microscopy. A wide variation of layer morphology is obtained dependent on the deposition rate: lowering the deposition rate generally results in larger island size and rougher surfaces. In most cases, the Sb layer is of rhombohedral structure. However, in a very narrow range of deposition rates, we found a growth mode of Sb, which is similar to a pseudo-cubic phase. This phase was found so far only for a thickness below 15 ML after annealing at 475 K.