Thin films of CuPbI3 have been prepared by a vacuum evaporation process. X-ray analysis show the films to be polycrystalline with hexagonal crystal lattice, and a preferred growth in the c-direction. Transport studies have shown the material to be ionically conducting, conductivity being due to iodine ion vacancy motion, with an activation energy of 0.29 eV and an ionic transference number (by Wagner's method) greater than 0.99. This was independently confirmed by the electromotive cell potential method. All thin film galvanic cells of the form Pb/CuPbI3/AgI/Ag gave an OCV of 0.211 V and a capacity of 6.6 mu A h for cells (0.36 cm(2) geometrical area) discharged at room temperature.