Indium Tin Oxide (ITO) films have been deposited using a thermal deposition technique without introduction of oxygen into the chamber. It has been found that the deposition rate, rather than the substrate temperature, is the dominant factor in controlling the transmittance of the ITO films. A transmittance value of more than 80% in the visible region of the spectrum and a resistivity of 9.1 X 10(-4) Ohm cm has been obtained with a deposition rate of 0.2 Angstrom/s. SEM, XRD and RES techniques have been used in order to identify the structure and composition changes of the ITO layers deposited at different conditions.