Cubic SiC thin films have been grown by supersonic jet epitaxy (SJE) using the single molecular precursor t-butyldimethylsilane (TBDMS), (CH3)(3)C-SiH(CH3)(2). Single crystal cubic SiC thin films were grown on both carburized and uncarburized Si(100) at a temperature of 830 degrees C. Highly oriented cubic SiC(111) thin films were obtained on carburized and uncarburized Si(111) substrates at 830 degrees C. This growth temperature is much lower than conventional CVD growth temperatures. It is believed that this is the first report of SIC growth using t-butyldimethylsilane.