Bismuth thin films have been deposited at 200 degrees C on glass substrates using the pulsed laser deposition (PLD) technique with a high energy density (8 J/cm(2)). Influences on the film morphologies, topographies and crystallographic structures of different background atmospheres during deposition (vacuum, low He or N-2 pressures (10(-6)-10(-7) mbar)) introduced in the chamber either in a dynamic way or under static conditions were investigated. Film growth is processed differently, depending on ambient atmosphere. Well-crystallized, polycrystalline bismuth films presenting completely random-oriented crystallites are obtained whereas more conventional deposition techniques favour c-axis orientation.