Ferroelectric BaTiO3 thin films have been prepared at atmospheric pressure on Si substrate by Metalorganic Chemical Vapor Deposition (MOCVD). Ba(DPM)(2) and titanium isopoproxide (TIP) were used as metalorganic source. The microstructure and composition of the thin films were studied by XRD, SEM and EPMA, respectively. The prepared films at a substrate temperature of 700 degrees C on Si substrate showed polycrystalline structure with smooth and uniform surface. The films have fully textured with (001)-orientation after rapid thermal annealing, and have a dielectric constant (epsilon) of 107 and the dissipation factor (tan delta) of 0.08. The films exhibited remanent polarization (P-r) of 2.0 mu C cm(-1), and coercive field (E-c) of 4.0 kV cm(-1), from the P-E hysteresis loop observation. The influence of substrate and stress to the physical properties of the films was mainly discussed. A dispersive Curie peak and the low-temperature-shifted Curie temperature were obtained from the epsilon-T curve, due to the existence of tensile stress on the films.