Poylcrystalline hexagonal boron nitride thin films were deposited on silicon substrates in the temperature range of 600-900 degrees C from the organometallic single source precursor borane-triethylamine complex, (C2H5)(3)N . BH3. Hydrogen was used as carrier gas and additional nitrogen was supplied by molecular beam of ammonia, or nitrogen via a remote plasma. The films were characterized by Fourier transform infrared spectroscopy, Auger electron spectroscopy, transmission electron diffraction, optical transmission, and atomic force microscopy.