Aluminium antimonide (AlSb) films have been grown by hot wall epitaxy on KCl substrates kept at different temperatures in vacuum of 1 x 10(-5) Torr. The experimental conditions are optimised to obtain better crystallinity of the films. The electrical conductivity, Hall mobility and carrier concentration are determined. The films appear to be p-type; thus, indicating holes as dominant charge carriers. Scanning electron microscopy shows an increase in grain size with substrate temperature. Transmission electron micrographs indicate a better crystallinity of AlSb films as compared to those grown by thermal co-evaporation.