Optical functions (alpha(omega)), n(omega), k(omega), epsilon(1)(omega), epsilon(2)(omega), Im epsilon(-1)(omega), G(omega), sigma(opt)(omega), 1/(n(2)-1)) of the CrSi2 A-type epitaxial films 100 nm thick, grown by template method, have been studied by transmittance and reflectance spectroscopy in the energy range of 0.09-1.1 eV. A detailed analysis of the absorption coefficient data (alpha(omega)) indicates that epitaxial CrSi2 A-type film is a semiconductor with a direct forbidden energy gap of about E-g=0.37 eV. Undispersed refraction index region (with n(0)=4.38) lies at energies below E-g=0.37 eV. This confirms the existence of fundamental absorption edge. Additionally, two direct interband transitions E-g1=0.73 eV and E-g2=0.93 eV with the greater state densities have been observed in the energy range 0.6-1.1 eV. Three direct interband transitions in the used energy range are responsible for the formation on the whole of all optical functions. The intrinsic photoeffect in the CrSi2 A-type epitaxial films has been studied by photoconductivity method. The spectral dependence of photoconductivity in the energy range of 1.0-1.6 eV and the integral photoconductivity signal (in the energy range of 0.5-0.83 eV) of the CrSi2 A-type epitaxial films were registered in the first time.