Thin Solid Films, Vol.311, No.1-2, 128-132, 1997
Preparation and properties of conductive LaNiO3 thin films by a thermal decomposition of water-based solutions
Conductive LaNiO3 (LNO) thin films were prepared by a thermal decomposition of water-based solutions. The structures, morphologies and resistivity of the LNO films are investigated as a function of thermal annealing rates and temperatures, and additives. Experimental results show that the LNO films annealed at a slow heating rate and without additive glycine have uniform and dense surface. The room-temperature resistivity of the films annealed at 650 degrees C similar to 700 degrees C is about 0.81 m Ohm cm. The rapid thermal annealing and addition of glycine in precursor solution lead to the deteriorated surface and lar er resistivity.
Keywords:FERROELECTRIC MEMORIES