Micron-scale mapping of intrinsic stress in a foe-standing chemical vapor deposition diamond film was performed by analysis of splitting and shift of the Raman diamond line. Stress distribution within individual grains was observed for high quality (line width of 2.8-3.0 cm(-1)) 600 mu m thick free-standing film grown by microwave plasma enhanced chemical vapor deposition. It has been shown that all the variety of the Raman diamond line shapes observed can be presented by a superposition of two symmetric components with narrow widths. In some cases the two components can be completely resolved in succession by polarization analysis. (110)-Oriented crystals reveal anisotropic stress fluctuations up to 9 GPa of both signs (compressive and tensile). For grain sizes of 100-200 mu m high stressed regions of 200-300 mu m(2) area located in the vicinity of edges and grain boundaries have been detected. Possible sources of the high stresses of bath signs related to defect and impurity distributions within the grain are discussed.