Advanced semiconductor detection devices incorporate surface texturing to reduce the reflection of incident radiation, and thus, enhance optical absorption through scattering. Using micromachining techniques, three different silicon surfaces were fabricated, optically characterized, and analyzed in terms of their ability to scatter incident optical energy. The fabricated surfaces consist of randomly sized and spaced pyramids (RSSPs), deep vertical-wall grooves (DVWGs), and porous silicon (PS). The RSSP textured surfaces consist of randomly-sized pyramids whose square base widths and heights span 0.5-12.0 mu m, but otherwise manifest consistent shape and symmetry. The pyramid walls form an angle of 54.74 degrees with respect to the surface of the sample. The DVWG structures consist of interdigitated, 270-mu m deep, 25-mu m wide, and 1000-mu m long grooves separated by 5-mu m wide walls. The porous silicon samples consist of surfaces with etched random pores that are 0.2-5-mu m deep, 1-5-mu m long, and 0.1-5-mu m wide. Utilizing laser scatterometry, the bi-directional reflectance distribution function (BRDF) of the silicon textured surfaces was measured at commercially available laser wavelengths of 1.06 and 10.6 mu m. A highly-polished, single-crystal silicon wafer was used as a reference surface. The three micromachined surfaces manifested enhanced scattering at 1.06 mu m, as demonstrated by a reduced specular peak and increased average BRDF. The RSSP textured surface also demonstrated a small BRDF value at the 10.6-mu m illumination laser wavelength.