Pure platinum films were deposited onto SiO2(100 nm)/Si using MeCpPtMe3 and oxygen by metalorganic chemical vapor deposition (MOCVD). Platinum deposition was controlled by gas phase mass transfer with an apparent activation energy of 2.2 kcal mol(-1) within the temperature range of 300-450 degrees C. Film formation greatly depended on the nucleation and the growth rate according to the deposition temperatures. The deposition at 450 degrees C was mainly controlled by the growth rate and at 350 degrees C was governed by the nucleation rate. Holes formed on Pt films deposited at 350 degrees C were affected by the variation of oxygen flow rates. Holes within the films increased the film resistivity, MOCVD-Pt showed an excellent step coverage and a smooth and stable state after deposition of BST at 600 degrees C.