Bi2Te3 layers were elaborated for the first time using metal organic chemical vapor deposition. The films composition is stoichiometric when the following conditions are verified : substrate temperature lower than 500 degrees C, VI/V ratio greater than 3, TMBi partial pressure lower than 2 x 10(-4) atm. By X-ray diffraction and MEB observation, we noticed the polycrystalline structure of the layers. The high thermoelectric power (+190 mu V K-1 for the p-type layer and -94 mu V K-1 for the n-type layer) of this material is promising for device applications.