Two sorts of Cu-TCNQ films were prepared and characterized. One kind of film is amorphous, exhibiting novel electrical switching effects. The device configuration is a sandwich structure, typically, Al/amorphous Cu-TCNQ thin film/Cu. Films are grown on a Cu substrate by immersion in saturated malononitrile solutions of TCNQ (7,7,8,8-tetracyanoquinodimethane) at 50 similar to 80 degrees C, The degree of charge transfer (DCT) in this film is estimated at 0.41 according to the position of the IR absorption line of the CEN vibration. The current-voltage (I-V) characteristics reveal an abrupt decrease of the impedance from 2.4 K Ohm to 6 Ohm (for a typical sample) at a field strength about 4 X 10(3) V cm(-1) for a 1 mu m thick film. The low impedance memory state can be erased by the application of large current in either direction. Moreover, the device switches to the low impedance state again when the field strength across the film is decreased below 2 x 10(4) V cm(-1). The device is stable over a long period of time and has a life time of roughly 50 switching cycles. A possible switching mechanism is proposed.