This work reports on the effect of post-deposition rapid thermal annealing on the structural and electrical properties of deposited TiB2 thin films. The TiB2 thin films, thicknesses from 9 to 450 nm, were deposited by e-beam evaporation on high resistivity and thermally oxidized silicon wafers. The resistivity of as-deposited films varied from 1820 mu Omega cm for the thinnest film to 267 mu Omega cm for thicknesses greater than 100 nm. In the thickness range from 100 to 450 nm, the resistivity of TiB2 films has a constant value of 267 mu Omega cm. A rapid thermal annealing (RTA) technique has been used to reduce the resistivity of deposited films. During vacuum annealing at 7 x 10(-3) Pa, the film resistivity decreases from 267 mu Omega cm at 200 degrees C to 16 mu Omega cm at 1200 degrees C. Heating cycles during RTA were a sequence of 10 s. According to scanning tunneling microscopy analysis, the decrease in resistivity may be attributed to a grain growth through polycrystalline recrystallization, as well as to an increase in film density. The grain size and mean surface roughness of annealed films increase with annealing temperature. At the same time, the conductivity of the annealed samples increases linearly with grain size. The obtained results show that RTA technique has a great potential for low resistivity TiB, formation.