Thin titanium films were deposited on silicon wafers at various temperatures by DC magnetron sputtering. The films were rapidly annealed at 900 degrees C for 40 s to form TiSi2 of C54 structure. Both titanium and titanium silicide films were analyzed by secondary ion mass spectroscopy. It was discovered that oxygen impurities can largely be removed from the silicide phase by RTA by the well-known snowplow effect. However, substantial carbon impurities seem to remain within the silicide. Fortunately, the electrical conductivity of titanium silicide is less sensitive to the presence of carbon than oxygen.