The effect of SiH4 gas heating has been investigated for the growth of microcrystalline silicon (mu c-Si) thin film by plasma-enhanced chemical vapor deposition (PECVD) and low pressure CVD to improve the crystallinity and inhomogenities at the early stage of growth on amorphous substrate such as SiO2. By using the cathode heating technique, T-c = 550 degrees C, the crystallinity was enhanced from the early stage of growth in the PECVD of SiH4 highly diluted in H-2 at substrate temperature, T-s = 200 degrees C.