Thin Solid Films, Vol.296, No.1-2, 7-10, 1997
Deposition and Characterization of Silicon Grown in a Sif4/SiH4/H-2 Mixture for TFT Applications
The growth of polycrystalline silicon (polysilicon) films from SiF4/SiH4/H-2 gas mixtures is reported. These silicon films have been deposited on Coming 1737 glass substrates by adding SiF4 to an existing LPCVD polysilicon process in a Multi Process reactor. In addition, polysilicon films have been deposited in the same reactor by a PECVD process. The fluorine concentration was measured by SIMS. Grain size was determined by atomic force microscopy and showed a marked increase with fluorine incorporation.