Single-phase molybdenum carbide films were deposited on sapphire by CVD from a C-60/MoCl5/H-2 gas mixture. Mo2C could be grown at substrate temperatures of 600 and 800 degrees C using total pressures of 100 and 10 Torr, respectively. Metastable delta-MoC1-x was also deposited at 800 degrees C by lowering the total pressure to 2 Torr. For a constant mass flow of carrier gas, a high total pressure resulted in an increased growth rate of Mo2C at 600 degrees C, whereas a low total pressure favoured the growth of delta-MoC1-x at 800 degrees C. The films were lustrous and showed good adhesion to the substrate. Resistivities of 56-140 mu Omega cm were measured for the single-phase films.