We report on the fabrication and characterization of the metal oxide semiconductor structure on 3C-SiC films grown by reactive magnetron sputtering on Si(111) substrates. The SiO2 layer was thermally grown by a dry oxidation process at 1200 degrees C. Auger electron spectroscopy showed that the SiO2 layer was free from carbon-related compounds except for the region very close to the SiO2/SiC interface. Cross-sectional transmission electron microscopy showed a homogeneous SiO2 layer with a well-defined interface to 3C-SiC. Electrical properties of the MOS structure were analyzed by capacitance-voltage (C-V) and conductance-voltage (G-V) techniques. C-V curves showed accumulation, depletion, and deep-depletion phases. The capacitance in the inversion regime was not saturated, as is usually observed for wide-bandgap semiconductors. The density of positive charges in the grown oxide and the interface states were extracted using the high-frequency C-V and the conductance techniques. The interface state density was found to be in the range 3-7 x 10(11) cm(-2) eV(-1). The doping concentration (N-d) in the 3C-SiC film extracted from 1/C-2 plot was 2.8 x 10(15) cm(-3).