Four metallization systems. WTi/Au, Ti/Pt/Au, Mo/Au and Nb/Au, have been examined for thermal reliability, solderability, wire bonding and adhesion on chemically vapor deposited diamond (CVDD). Thermal stability up to 600 degrees C was determined by conductivity measurements and X-ray photoelectron spectroscopy depth profiles. WTi/Au was found to be the most thermally stable, exhibiting constant resistivity and little interdiffusion after 4 h at 500 degrees C. Nb/Au was stable to approximately 450 degrees C, when marked diffusion of Nb into the gold caused a rapid rise in resistivity and loss of adhesion. Ti/Pr/Au exhibited slow diffusion of Pr into the Au and a modest rise in resistivity as low as 350 degrees C. Only Mo/Au showed significant interdiffusion between the Mo bond coat and CVDD at such low temperatures, This interdiffusion was markedly enhanced by the presence of oxygen. Each of the four metallization systems initially demonstrated excellent adhesion to CVDD, although ail eventually lost adhesion due to conversion of the transition metal carbide bond Layer to an oxide.