This paper describes the preparation of alpha*-Fe16N2 single-crystal films by facing targets sputtering (FTS) onto single-crystal NaCl (001) substrates. There are, depending on the experimental conditions, 3 kinds of growth plane of alpha*-Fe16N2, i.e., (110), (011) and (001). Better crystallinity has been observed in the (011) growth mode due to the smaller Lattice mismatch. Based on the crystallographic relationships, we explain how the different growth patterns originated. To understand (110) growth, we introduce the concept of a lattice mismatch for a longer period called ’extended atomic distance mismatch’ which was developed by Sun ei al. to explain the epitaxial process.