A method of thin film growth by ion implantation into a medium of liquid metal is presented. Thin layers of aluminum and indium deposited on silicon and silicon carbide (6H-type) substrates were liquified and implanted with carbon ions (at 190 keV). The resulting layers were characterized by X-ray diffraction, Auger electron spectroscopy and scanning electron microscopy. The results obtained on silicon substrate show growth of a carbonaceous layer on an intermediate layer of beta SiC when either Al or In were used. On SiC (6H-type) substrates no diamond growth was observed, with either Al or In. The experimental problems faced during this work are also presented and discussed.