Thin Solid Films, Vol.277, No.1-2, 175-179, 1996
Crystallinity for Epitaxial Thin-Films of Bi-Based Oxide Superconductor Prepared at Low-Temperature
As-deposited thin films of superconducting Bi2Sr2Ca1Cu2O8+delta (2212) and normally conductive Bi2Sr2Cu1O6+delta (2201) were prepared by a r.f. reactive magnetron sputtering method. Epitaxial growth of these Bi-based oxide films was realized on SrTiO3 and MgO substrates at the relatively low temperature of 650 degrees C. Superstructures along the a axis of the films deposited on MgO substrates were observed. Moreover, epitaxial growth of stacked 2201/2212 thin films was obtained at this temperature. Crystallinity of these thin films was evaluated by reflection high-energy electron diffraction, Rutherford backscattering spectroscopy and X-ray diffraction measurements.