화학공학소재연구정보센터
Thin Solid Films, Vol.276, No.1-2, 51-54, 1996
Investigation of the Nonradiative Processes in Porous Silicon
The temperature (T) dependence of the yellow-red photoluminescence band is studied in the range from 300 K to 10 K. From the simultaneous intensity and lifetime measurements it is possible to separate unambiguously the radiative and non-radiative components of the decay process. From the analysis of the non-radiative component a model is suggested in which potential barriers can confine excitons, limiting in this way the possible paths for non-radiative recombination.