Thin Solid Films, Vol.260, No.1, 26-31, 1995
Sputtered Molybdenum Bilayer Back Contact for Copper Indium Diselenide-Based Polycrystalline Thin-Film Solar-Cells
A method is described for fabricating low-resistivity molybdenum films on soda-lime glass substrates with good adhesion. Films are sputtered onto substrates nominally held at room temperature in a cryo-pumped d.c. magnetron system in a partial pressure of argon. 1-mu m-thick films sputtered at low argon pressure were found to have low resistivity (10-15 mu Omega cm), were under compressive stress, and suffered from poor adhesion. Films sputtered with high argon pressure had high resistivity (50-250 mu Omega cm), were under tensile stress, but adhered well to the glass. By varying argon pressure during deposition, 1-mu m-thick molybdenum bilayers have been fabricated with both low resistivity (12-14 mu Omega cm) and good adhesion. These films are being used as back contacts for the National Renewable Energy Laboratoy’s state-of-the-art polycrystalline copper indium gallium diselenide solar cells with good results.
Keywords:INTRINSIC STRESS;INTERFACE PROPERTIES;METAL CONTACTS;MO;MICROSTRUCTURE;RESISTIVITY;CRYSTALS;TUNGSTEN;CUINSE2;OXYGEN