The results of an investigation of the current transport processes in In2O3-ZnSe-(Zn1-xCdxTe)(1-y)(In2Te3)(y)-In heterostructures grown on glass substrates by thermal evaporation are reported. Auger and X-ray diffraction spectra as well as the thermoluminescence and dark and light electrical conductivity were studied in the temperature range 77-420 K. The corresponding characteristics are presented. It is shown that In2O3-ZnSe-(Zn1-xCdxTe)(1-y)(In2Te3)(y)-In is a semiconducting system with complex zone variation through the sample depth, including random potential; the main contribution to the formation of the random potential is due to fluctuations of the solid solution composition; the heterostructure contains a high density of impurity levels forming the impurity zone; current transport through this zone determines the dark conductivity at low temperature. It is confirmed that the dark steady-state current at room temperature for a voltage of less than 1 V is determined either by a Schottky barrier between the film of the solid solution (FSS) and the indium electrode, or by the complex heterojunction between indium oxide and the FSS, depending on the polarity of the external voltage. In the latter case the main contribution to the limiting function is provided by the solid solution layer. Results showing that inversion of the conductivity type takes place in zinc selenide film under the influence of the FSS are presented. The energy diagram of the heterostructure is developed. The height of the barrier, which limits the current when indium oxide is used as an anode, is determined.