The electrical resistivity and thermopower of heterogeneous CrxSi1-x thin films have been investigated in terms of their dependence on the degree of crystallization arising from a post-deposition annealing treatment. The films were prepared by physical vapour deposition within the silicon rich region 0.2 < x < 0.3. At high annealing temperatures the films investigated were found to be two-component systems consisting of CrSi2 and Si crystallites. The transport behaviour is discussed on the basis of the X-ray structural analysis results. The thermoelectric efficiency of the deposited films can be influenced by the heat treatment conditions. Using a combination of annealed binary CrSi and ternary CrSiN thin films it is possible to prepare thermocouples for application at elevated temperatures.