In this paper an ion beam induced chemical vapor deposition procedure is proposed for the preparation of oxide films. The method consists of the bombardment of a substrate with O2+ ions while a flow of a volatile precursor is directed onto it. The possibilities of the method are illustrated by a TiO2 thin film grown on quartz from Ti(CH3CH2O)4 as precursor. The grown film is studied by X-ray photoelectron spectroscopy, scanning and transmission electron microscopies, and UV-visible spectroscopy. The refractive indexes of the films (between 2.3 and 2.7) are similar to those of other TiO2 thin films prepared by ion beam assisted deposition methods.