The deposition of copper oxide films by reactive laser ablation of copper formate in the presence of an oxygen r.f plasma ambient has been studied. The presence of Cu2O and CuO phases in the films has been identified by infrared spectroscopy and by X-ray diffractometry. The films deposited in a flowing oxygen ambient are rich in metallic copper. The application of an r.f. discharge results in efficient oxidation of the ablated copper species, and copper oxide films of varying stoichiometry can be obtained by systematically altering the discharge characteristics. Deposition conditions leading to the formation of single-phase cuprous oxide films (resistivity about 10 Omega cm) have been identified and the stoichiometry verified by Auger electron spectroscopy.