Thin films of La1-xSrxGa1-yMgyO3-(x+y)/2 were prepared by the electrophoretic deposition technique using acetone-containing iodine (750 mg I-1) as solvent medium. Between each deposition sintering was performed for 1 h duration at various temperatures, of 100 degrees intervals, in the range 1273-1673 K. At temperatures below 1673 K, the deposited films did not sinter well and were porous. Dense films with uniform thickness of 4 mu m were obtained after five repetitions of deposition and sintering at 1673 K. The ionic conductivity of the film was measured using an ac impedance bridge. The conductivity of the films is comparable with that of bulk samples.