Electric conductivity and dielectric permittivity of mixed electronic-ionic conductivity compounds (BS)(1-x)(DAsS2)(x) (B = Ge, Pb; D = Ag, Cu)

Baranova ER; Kobelev VL; Kobeleva OL; Melnikova NV; Zlokazov VB; Kobelev LY; Perfiliev MV

Solid State Ionics, Vol.124, No.3-4, 255-261, 1999

DOI10.1016/S0167-2738(99)00209-X Export Citation

Electric conductivity and dielectric permittivity of mixed electronic-ionic conductivity compounds (BS)(1-x)(DAsS2)(x) (B = Ge, Pb; D = Ag, Cu)

Baranova ER, Kobelev VL, Kobeleva OL, Melnikova NV, Zlokazov VB, Kobelev LY, Perfiliev MV

The temperature dependencies of the electrical conductivity and dielectric permittivity of (BS)(1-x)(DAsS2)(x) (B = Ge, Ph; D = Ag, Cu) were investigated by means of impedance measurements in the frequency range between 10(-1) and 10(5) Hz and at temperatures between 78 and 500 K. In all chalcogenides, ionic conductivity (Ag+ or Cu+) was found. The onset of ionic transport was found at 115-120 K for AgGeAsS3 and 110-115 K for CuGeAsS3. The complex impedance and admittance plots, the electrical properties and the X-ray structure data are given.