This work provides a methodology for modeling electrical conductivity in high-temperature proton-conducting oxides. Total conductivity was calculated assuming that it comprises partial conductivities contributed by protons, oxygen ions, and electron holes. From the plots sigma(tot) vs. P-w(1/2) and sigma(tot) vs. P-O2(1/4) , thermodynamic and kinetic parameters were obtained representing transport properties such as concentration and mobility of the charge-carrying defects. The formulae for the calculation of partial conductivities were based on the defect structure of HTPCs. Illustrative calculations were made for the literature data measured in SrCe0.95Yb0.05O2.975 system and BaTh0.9RE0.1O2.95 (RE=Y and Nd) systems.