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Solid State Ionics, Vol.82, No.1-2, 107-111, 1995
Preparation of La(Sr)Cro3-Delta Thin-Film Interconnector by High Deposition Rate Laser-Ablation Method
A-site deficient La(Sr)CrO3-delta thin film interconnectors were successfully fabricated on porous La(Sr)MnOx tubes using high deposition rate laser ablation. The La(Sr)CrO3-delta films obtained by this method are dense and void-free. The film deposition rate was about 10 mu m/min. The substrate could easily be masked in order to deposit the films in the desired shape. The substrate tube was heated at 873-1073 K. As the substrate temperature was much lower than the sintering temperature of the substrate tube, the porous micro-structures of the substrate tube were maintained. The difference in chemical composition between the film and the target was negligible.