화학공학소재연구정보센터
Solid State Ionics, Vol.76, No.1-2, 41-46, 1995
Preparation of La1-Xsrxcro3-Delta Film by Laser-Ablation Method
La1-xSrxCrO3-delta films were fabricated on yttria stabilized zirconia (YSZ) and La(Sr)MnO3 polycrystal substrates using the laser ablation method. At a substrate temperature of 973 K and an oxygen pressure of 10(-4) Torr, the resultant films were pore-free and contained no detectable oxygen vacancy, The chemical composition of the films almost agreed with the target. Film crystallinity depended on the crystal structure of the substrates. The film formed on YSZ substrate showed remarkable primary particle growth resulting from heat-treatment at 1473 K for 5 h in air. When a film was formed on the LaMnO3 substrate, which has a crystal structure similar to that of LaCrO3, under the same conditions as above, neither crystal structure change nor particle growth was observed from heat-treatment at 1473 K.