Thin films of ZrO2-TiO2-Y2O3 system were fabricated by a laser CVD method. The deposited films of this system show (100) orientation and this orientation is independent of the kinds of substrates. The solubility range of the Tio2 into yttria stabilized zirconia (YSZ) is considerably spread in this preparation technique compared with that in the sintering technique. From this result, it is expected that high-concentration TiO2-doped YSZ should exhibit mixed conduction with a very high electronic part. The total conductivity of high TiO2-doped YSZ was measured by the ac impedance method.