A new degradation technique for amorphous silicon solar cells comprising of a combination of current injection and insolation has been developed. Compared to the conventional light degradation technique, current-induced degradation which involves forward biased current stress, results in a lower stabilized cell parameters including efficiency. This stabilized efficiency is, however, independent of the amount of current injected. The excess degradation is recovered under light illumination. The stabilized value of the conversion efficiency is within experimental error identical to that observed in long term, illumination only degradation. The method is fast, accurate and reliable. Its reliability has also been tested for single junction solar cells having intrinsic layers of different band gaps, as well.