In this paper we describe our research efforts directed towards the understanding of the CdS/CuInGase(2) junctions and, specifically, the interaction of the chemical bath with the CuInGaSe2. Information gained from these studies has been used to develop a set of criteria for forming junctions without the need for chemical bath deposition or CdS. Our approach differs from many others previously used "alternative buffer layer" methods which appear to be somewhat problematic in implementation as well as in the quality of the results. This "buffer-free" technology has resulted in a 13.5% efficiency cell.