The short-circuit current density is an important parameter to improve the conversion efficiency of solar cells. Solar cells with heterojunction structures employing a wide-bandgap window-layers are nowadays common to achieve greater photogenerated current. Plasma CVD deposited a-SiOx:H (Hydrogenated amorphous silicon oxide) has been widely used as an insulator and for surface passivation in electronic device manufacturing, however, there is little knowledge about doped materials. We have prepared a-SiOx:H films using silane (SiH4) and oxygen (O-2) as reactive gases in a capacitively-coupled single-chamber plasma CVD system. Diborane (B2H6) was introduced as a doping gas to obtain p-type conduction silicon oxide. In this work we report properties of the prepared materials at different substrate temperatures, plasma power and doping concentrations. The optical bandgap increases with oxygen-to-silane-gas-flow ratio, while the electrical conductivity decreases. The optical bandgap changes easily as a function of gas-source ratio from 1.3 to 2.0 eV. The deposition rate varies from 10 to 22 nm/min, depending mostly on the plasma excitation power. As a first approach, hydrogenated amorphous silicon solar cells have been fabricated using p-type a-SiOx H with around 1.85 eV optical bandgap and conductivity greater than 10(-7) Scm. The measured current-voltage characteristics of the solar cells under the artificial light of 100 mW/cm(2) are V-oc = 0.84 V, J(sc) = 14.66 mA/cm(2) with a conversion efficiency of 6.95%.