The photovoltaic output of two types of CdTe - Cu2Te solar cells has been investigated. Type A devices are fabricated on a CdTe single crystal substrate etched by 2% bromine in methanol in the presence of an excimer laser with an intensity of 30 mW/cm(2) as an illumination source during the etching process, while type B devices are fabricated on CdTe single crystal substitute etched by 2% bromine in methanol only. The current -voltage characteristics and capacitance-voltage characteristics of these two groups of devices are demonstrated to be strongly influenced by the process of etching. The electrical properties such as open circuit voltage, short circuit current, fill factor, efficiency, diffusion voltage, carrier concentration, barrier height and ideality factor of the CdTe - Cu2Te heterojunction are calculated for both types of devices.