Polymer Engineering and Science, Vol.35, No.2, 180-183, 1995
Cross-Linking in Halogen-Containing Novolac Electron-Beam Negative Resists
Halogenophenol novolac (HPN)-based negative resists exhibit excellent sensitivity and pattern resolution properties. The HPNs act as synergists for crosslinking with other irradiation labile compounds such as naphthoquinone diazide and bisazide vs. hydrogen halide (HX) elimination reaction, resulting in additional crosslinking, probably by aryl radical recombination and/or addition. We describe a new resist formulation based on HPN binder and melamine crosslinker (Cymel 303). In this case the irradiation induced HX elimination additionally catalyzes the melamine crosslinking.
Keywords:PHOTORESIST