ArF excimer laser (lambda = 193 nm) lithography is a potentially applicable technology for the sub-0.18 mu m design rule. However, in practical use of ArF technology, many problems must be solved for the properties of photoresist. To solve these problems, we synthesized ArF polymer resin, poly (2-hydroxyethyl acrylate/2-(t-butoxycarbonyl)-5-norbornene/5-norbornene-2-carboxylic acid/maleic anhydride). 2-hydroxyethyl acrylate is very suitable adhesion promoter to the silicon wafer substrate. Using this resist, 0.14 mu m L/S pattern was obtained with 12 mJ cm(-2) exposure by ArF stepper on the conventional develop condition, 2.38 wt% tetramethyl ammonium hydroxide aqueous solution.