Soluble poly(p-phenylene biphenyltetracarboxamine acid) (BPDA-PDA PAA) precursor, which was synthesized from biphenyltetracarboxylic dianhydride and p-phenylene diamine in N-methyl-2-pyrrolidone (NMP), was spin-cast on silicon substrates, followed by softbake at various conditions over 80-185 degrees C. Softbaked films were converted in nitrogen atmosphere to be the polyimide films of ca. 10 mu m thickness through various imidizations over 120-400 degrees C. Residual stress, which is generated at the polymer/substrate interface by volume shrinkage, polymer chain ordering, thermal history, and differences between properties of the polymer film and the substrate, was measured in situ during softbake and subsequent imidization processes. Polymer films imidized were further characterized in the aspect of polymer chain orientation by prism coupling and X-ray diffraction. Residual stress in the polyimide film was very sensitive to all the him formation process parameters, such as softbake temperature and time, imidization temperature, imidization step, heating rate, and film thickness, but insensitive to the cooling process. Softbaked precursor films revealed 9-42 MPa at room temperature, depending on the softbake temperature and time. That is, residual stress in the precursor film was affected by the amount of residual solvent and by partial imidization possibly occurring during softbake above the onset of imidization temperature, ca. 130 degrees C. A lower amount of residual solvent caused higher stress in the precursor film, whereas a higher degree of imidization led to lower stress. Partially imidized precursor films were converted to polyimide films revealing relatively high stresses. After imidization, polyimide films exhibited a wide range of residual stress, 4-43 MPa at room temperature, depending on the histories of softbake and imidization. Relatively high stresses were observed in the polyimide films which were prepared from softbaked films partially imidized and by rapid imidization process with a high heating rate. The residual stress in films is an in-plane characteristic so that it is sensitive to the degree of in-plane chain orientation in addition to the thermal history term. Low stress films exhibited higher degree of in-plane chain orientation. Thus, residual stress in the film would be controlled by the alignment of polyimide chains via the film formation process with varying process parameters. Conclusively, in order to minimize residual stress and to maximize in-plane chain orientation, precursor films should be softbaked for 30 min-2 h below the onset imidization temperature, ca. 130 degrees C, and subsequently imidized over the range of 300-400 degrees C for 1-4 h by a two-step or multi-step process with a heating rate of less than or equal to 5.0 K min(-1), including a step to cover the boiling point, 202 degrees C, of NMP. In addition, the final thickness of the imidized films should be <20 mu m.