A sandwich structure of A1/[TBA](gamma)[Ni(DMID)(2)]/Cu shows a bistable and reproducibe electric field-induced switching and memory phenomenon (TBA = tetrabutylammonium, DMID = 1,3-dithiole-2-one-4,5,-dithiolate). Preparation, characterization and electrical properties of this organic thin film materials are reported with those of the related materilas. The current-voltage (I-V) characteristics of Al/[TBA](gamma)[Ni(DMID)(2)]/Cu reveal an abrupt decrease in resistance form a high to a low impedance state at a electric field strength of about 2400 V/cm for a 5 mu m thick film sample. Switching with high-power dissipation yields a low-impedance memory state which can be erased by the application of large currents, typically 3-10 mA (0.3-1.0 A/cm(2)), in either direction. In addition, the high-resistance state could also be re-established by allowing the device to remain for extended periods of time without an external electric field. The character of the switching from a high to a low impedance state in this organic charge transfer complex is same to the organic charge transfer complexes of M-TCNQ type (M = Cu, Ag; TCNQ = 7,7,8,8-tetracyano-p-quinodimethane), However, this contraster to the behavior observed in A1/[TBA](0.9)[Ni(DMID)(2)/Pt system.